{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11967615","patent":{"patent_number":"US-11967615","title":"Dual threshold voltage (VT) channel devices and their methods of fabrication","assignee":null,"inventors":[],"filing_date":"2015-12-23T00:00:00.000Z","publication_date":"2024-04-23T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":10,"abstract":"Embodiments of the present invention are directed to dual threshold voltage (VT) channel devices and their methods of fabrication. In an example, a semiconductor device includes a gate stack disposed on a substrate, the substrate having a first lattice constant. A source region and a drain region are formed on opposite sides of the gate electrode. A channel region is disposed beneath the gate stack and between the source region and the drain region. The source region is disposed in a first recess having a first depth and the drain region disposed in a second recess having a second depth. The first recess is deeper than the second recess. A semiconductor material having a second lattice constant different than the first lattice constant is disposed in the first recess and the second recess."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Dual threshold voltage (VT) channel devices and their methods of fabrication","description":"Embodiments of the present invention are directed to dual threshold voltage (VT) channel devices and their methods of fabrication. In an example, a semiconductor device includes a gate stack disposed ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11967615","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11967615","citation_suggestion":"Patentable. \"Dual threshold voltage (VT) channel devices and their methods of fabrication\" (US-11967615). https://patentable.app/patents/US-11967615","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11967615","json":"https://patentable.app/api/llm-context/US-11967615","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:20:03.235Z"}