{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11967629","patent":{"patent_number":"US-11967629","title":"Low noise and high-performance field effect transistors of 2-dimensional materials and methods to fabricate the same","assignee":null,"inventors":[],"filing_date":"2019-06-22T00:00:00.000Z","publication_date":"2024-04-23T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"A semiconductor device and methods of fabricating and using the same are provided. The semiconductor device comprises a channel region and at least a first, second, and third electrode. The channel region includes a compound having a transition metal and a chalcogen. The thickness of the channel region is about 3 to about 40 atomic layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low noise and high-performance field effect transistors of 2-dimensional materials and methods to fabricate the same","description":"A semiconductor device and methods of fabricating and using the same are provided. The semiconductor device comprises a channel region and at least a first, second, and third electrode. The channel re","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11967629","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11967629","citation_suggestion":"Patentable. \"Low noise and high-performance field effect transistors of 2-dimensional materials and methods to fabricate the same\" (US-11967629). https://patentable.app/patents/US-11967629","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11967629","json":"https://patentable.app/api/llm-context/US-11967629","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T02:41:22.893Z"}