{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11967797","patent":{"patent_number":"US-11967797","title":"Puncture forming method, sample separating method, semiconductor element manufacturing method, semiconductor laser element manufacturing method, and semiconductor laser element","assignee":null,"inventors":[],"filing_date":"2020-10-02T00:00:00.000Z","publication_date":"2024-04-23T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A puncture forming method is a method of forming punctures in a sample by irradiating a surface of the sample with a light beam. The puncture forming method includes: forming a first puncture by irradiating a first position on the surface of the sample with a first pulse of the light beam; and after the forming of the first puncture, forming a second puncture which at least partially overlaps the first puncture by irradiating, with a second pulse of the light beam, a second position on the surface of the sample positioned away from the first position in a first direction. The second puncture has a tip which is positioned inside the sample and which is bent in a direction opposite to the first direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Puncture forming method, sample separating method, semiconductor element manufacturing method, semiconductor laser element manufacturing method, and semiconductor laser element","description":"A puncture forming method is a method of forming punctures in a sample by irradiating a surface of the sample with a light beam. The puncture forming method includes: forming a first puncture by irrad","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11967797","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11967797","citation_suggestion":"Patentable. \"Puncture forming method, sample separating method, semiconductor element manufacturing method, semiconductor laser element manufacturing method, and semiconductor laser element\" (US-11967797). https://patentable.app/patents/US-11967797","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11967797","json":"https://patentable.app/api/llm-context/US-11967797","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:23:28.511Z"}