{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11968818","patent":{"patent_number":"US-11968818","title":"SRAM memory cell for stacked transistors with different channel width","assignee":null,"inventors":[],"filing_date":"2021-06-11T00:00:00.000Z","publication_date":"2024-04-23T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A semiconductor device including a static random access memory (SRAM) in a three-dimensional (3D) stack is provided. The semiconductor device includes a first transistor stack including a first channel and a first gate, a second transistor stack including a second channel and a second gate, the second transistor stack being disposed above the first transistor stack, a bit line disposed on a first portion of an upper surface of the first channel, a voltage source disposed on a first portion of an upper surface of the second channel and a first shared contact connecting the first channel to the second channel, where a width of the second channel is less than a width of the first channel."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"SRAM memory cell for stacked transistors with different channel width","description":"A semiconductor device including a static random access memory (SRAM) in a three-dimensional (3D) stack is provided. The semiconductor device includes a first transistor stack including a first channe","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11968818","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11968818","citation_suggestion":"Patentable. \"SRAM memory cell for stacked transistors with different channel width\" (US-11968818). https://patentable.app/patents/US-11968818","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11968818","json":"https://patentable.app/api/llm-context/US-11968818","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:15:38.239Z"}