{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11968819","patent":{"patent_number":"US-11968819","title":"Gate-all-around field-effect transistors in integrated circuits","assignee":null,"inventors":[],"filing_date":"2022-07-29T00:00:00.000Z","publication_date":"2024-04-23T00:00:00.000Z","cpc_codes":["B82Y","H01L"],"num_claims":20,"abstract":"An integrated circuit (IC) that includes a memory cell having a first p-type active region, a first n-type active region, a second n-type active region, and a second p-type active region. Each of the first and the second p-type active regions includes a first group of vertically stacked channel layers having a width W1, and each of the first and the second n-type active regions includes a second group of vertically stacked channel layers having a width W2, where W2 is less than W1. The IC structure further includes a standard logic cell having a third n-type fin and a third p-type fin. The third n-type fin includes a third group of vertically stacked channel layers having a width W3, and the third p-type fin includes a fourth group of vertically stacked channel layers having a width W4, where W3 is greater than or equal to W4. "},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gate-all-around field-effect transistors in integrated circuits","description":"An integrated circuit (IC) that includes a memory cell having a first p-type active region, a first n-type active region, a second n-type active region, and a second p-type active region. Each of the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11968819","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11968819","citation_suggestion":"Patentable. \"Gate-all-around field-effect transistors in integrated circuits\" (US-11968819). https://patentable.app/patents/US-11968819","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11968819","json":"https://patentable.app/api/llm-context/US-11968819","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:43:40.441Z"}