{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11968822","patent":{"patent_number":"US-11968822","title":"Memory device using semiconductor element","assignee":null,"inventors":[],"filing_date":"2022-07-06T00:00:00.000Z","publication_date":"2024-04-23T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":9,"abstract":"A first dynamic flash memory cell formed on a first Si pillar 25a including an N+ layer 21a, a P layer 22a, and an N+ layer 21b, and a second dynamic flash memory cell formed on a second Si pillar 25b including a P layer 22b and an N+ layer 21c, the first dynamic flash memory cell and the second dynamic flash memory cell sharing the N+ layer 21b that is connected to a first bit line BL1, are stacked on top of one another on a P-layer substrate 20 to form a dynamic flash memory. In plan view, a first plate line PL1, a first word line WL1, a second word line WL2, and a second plate line PL2 extend in the same direction and are formed to be perpendicular to a direction in which the first bit line BL1 extends."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device using semiconductor element","description":"A first dynamic flash memory cell formed on a first Si pillar 25a including an N+ layer 21a, a P layer 22a, and an N+ layer 21b, and a second dynamic flash memory cell formed on a second Si pillar 25b","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11968822","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11968822","citation_suggestion":"Patentable. \"Memory device using semiconductor element\" (US-11968822). https://patentable.app/patents/US-11968822","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11968822","json":"https://patentable.app/api/llm-context/US-11968822","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:23:55.716Z"}