{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11968825","patent":{"patent_number":"US-11968825","title":"Three-dimensional memory device containing on-pitch drain select level structures and methods of making the same","assignee":null,"inventors":[],"filing_date":"2020-12-18T00:00:00.000Z","publication_date":"2024-04-23T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":4,"abstract":"A three-dimensional memory device includes an alternating stack of insulating layers and word-line-level electrically conductive layers located over a substrate, and a vertical layer stack located over the alternating stack, the vertical layer stack including an insulating cap layer, drain select electrodes, and a drain-select-level insulating layer. The drain select electrodes are laterally spaced apart from each other by drain-select-level isolation structures. Memory stack structures including a respective vertical semiconductor channel and a respective memory film vertically extend through the alternating stack and the vertical layer stack. Each of the vertical semiconductor channels includes a word-line-level semiconductor channel portion extending through the alternating stack, a connection channel portion contacting a top end of the word-line-level semiconductor channel, and a drain-select-level semiconductor channel portion vertically extending through the vertical layer stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory device containing on-pitch drain select level structures and methods of making the same","description":"A three-dimensional memory device includes an alternating stack of insulating layers and word-line-level electrically conductive layers located over a substrate, and a vertical layer stack located ove","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11968825","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11968825","citation_suggestion":"Patentable. \"Three-dimensional memory device containing on-pitch drain select level structures and methods of making the same\" (US-11968825). https://patentable.app/patents/US-11968825","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11968825","json":"https://patentable.app/api/llm-context/US-11968825","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:20:20.334Z"}