{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11968907","patent":{"patent_number":"US-11968907","title":"Magnetoresistive memory device including a magnetoresistance amplification layer","assignee":null,"inventors":[],"filing_date":"2022-07-05T00:00:00.000Z","publication_date":"2024-04-23T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"A magnetoresistive memory cell includes a first electrode, a second electrode that is spaced from the first electrode, a magnetic tunnel junction layer stack located between the first electrode and the second electrode, the magnetic tunnel junction layer stack containing, from one side to another, a reference layer having a fixed reference magnetization direction, a tunnel barrier layer comprising a dielectric material, and a free layer, and an asymmetric magnetoresistance layer located between the magnetic tunnel junction layer stack and one of the first electrode and the second electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetoresistive memory device including a magnetoresistance amplification layer","description":"A magnetoresistive memory cell includes a first electrode, a second electrode that is spaced from the first electrode, a magnetic tunnel junction layer stack located between the first electrode and th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11968907","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11968907","citation_suggestion":"Patentable. \"Magnetoresistive memory device including a magnetoresistance amplification layer\" (US-11968907). https://patentable.app/patents/US-11968907","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11968907","json":"https://patentable.app/api/llm-context/US-11968907","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:57:38.926Z"}