{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11968908","patent":{"patent_number":"US-11968908","title":"Magnetic tunnel junction device","assignee":null,"inventors":[],"filing_date":"2022-06-30T00:00:00.000Z","publication_date":"2024-04-23T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":20,"abstract":"In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic tunnel junction device","description":"In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11968908","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11968908","citation_suggestion":"Patentable. \"Magnetic tunnel junction device\" (US-11968908). https://patentable.app/patents/US-11968908","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11968908","json":"https://patentable.app/api/llm-context/US-11968908","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:50:12.736Z"}