{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11970772","patent":{"patent_number":"US-11970772","title":"Dynamic precursor dosing for atomic layer deposition","assignee":null,"inventors":[],"filing_date":"2021-10-20T00:00:00.000Z","publication_date":"2024-04-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":10,"abstract":"Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Dynamic precursor dosing for atomic layer deposition","description":"Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11970772","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11970772","citation_suggestion":"Patentable. \"Dynamic precursor dosing for atomic layer deposition\" (US-11970772). https://patentable.app/patents/US-11970772","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11970772","json":"https://patentable.app/api/llm-context/US-11970772","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:12:13.129Z"}