{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11970784","patent":{"patent_number":"US-11970784","title":"Nitride semiconductor substrate, method for manufacturing nitride semiconductor substrate, and laminated structure","assignee":null,"inventors":[],"filing_date":"2019-08-22T00:00:00.000Z","publication_date":"2024-04-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":22,"abstract":"There is provided a nitride semiconductor substrate having a diameter of 2 inches or more and having a main surface whose closest low index crystal plane is a (0001) plane, wherein X-ray locking curve measurement for (0002) plane diffraction, which is performed to the main surface by irradiating with (Cu) Kα1 X-rays through a two-crystal monochromator of Ge (220) plane and a slit, reveals that full width at half maximum FWHMb is 32 arcsec or less, and FWHMa−FWHMb obtained by subtracting FWHMb from FWHMa is 30% or less of FWHMa, wherein FWHMa is full width at half maximum of the (0002) plane diffraction when a slit width in ω direction is 1 mm, and FWHMb is full width at half maximum of the (0002) plane diffraction when a slit width in ω direction is 0.1 mm."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nitride semiconductor substrate, method for manufacturing nitride semiconductor substrate, and laminated structure","description":"There is provided a nitride semiconductor substrate having a diameter of 2 inches or more and having a main surface whose closest low index crystal plane is a (0001) plane, wherein X-ray locking curve","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11970784","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11970784","citation_suggestion":"Patentable. \"Nitride semiconductor substrate, method for manufacturing nitride semiconductor substrate, and laminated structure\" (US-11970784). https://patentable.app/patents/US-11970784","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11970784","json":"https://patentable.app/api/llm-context/US-11970784","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:56:56.255Z"}