{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11972139","patent":{"patent_number":"US-11972139","title":"Read voltage level correction method, memory storage device, and memory control circuit unit","assignee":null,"inventors":[],"filing_date":"2022-02-24T00:00:00.000Z","publication_date":"2024-04-30T00:00:00.000Z","cpc_codes":["G06F","G11C","G06F","G06F","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":18,"abstract":"A read voltage level correction method, a memory storage device, and a memory control circuit unit are provided. The method includes: using a first read voltage level as an initial read voltage level to perform a first data read operation on a first physical unit among multiple physical units to obtain a second read voltage level used to successfully read the first physical unit; recording association information between the first read voltage level and the second read voltage level in a transient look-up table; and performing a second data read operation according to a read level tracking table and the association information recorded in the transient look-up table."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Read voltage level correction method, memory storage device, and memory control circuit unit","description":"A read voltage level correction method, a memory storage device, and a memory control circuit unit are provided. The method includes: using a first read voltage level as an initial read voltage level ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11972139","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11972139","citation_suggestion":"Patentable. \"Read voltage level correction method, memory storage device, and memory control circuit unit\" (US-11972139). https://patentable.app/patents/US-11972139","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11972139","json":"https://patentable.app/api/llm-context/US-11972139","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:15:02.018Z"}