{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11972805","patent":{"patent_number":"US-11972805","title":"Non-volatile memory with narrow and shallow erase","assignee":null,"inventors":[],"filing_date":"2022-08-05T00:00:00.000Z","publication_date":"2024-04-30T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"In a non-volatile memory, to achieve a shallow and tight erased threshold voltage distribution, a process is performed that includes erasing a group of non-volatile memory cells, identifying a first set of the bit lines that are connected to non-volatile memory cells of the group that are erased past a lower limit for erased non-volatile memory cells and identifying a second set of the bit lines that are connected to non-volatile memory cells of the group that are not erased past the lower limit for erased non-volatile memory cells, and applying programming to non-volatile memory cells connected to the first set of bit lines while inhibiting programming for non-volatile memory cells connected to the second set of bit lines."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-volatile memory with narrow and shallow erase","description":"In a non-volatile memory, to achieve a shallow and tight erased threshold voltage distribution, a process is performed that includes erasing a group of non-volatile memory cells, identifying a first s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11972805","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11972805","citation_suggestion":"Patentable. \"Non-volatile memory with narrow and shallow erase\" (US-11972805). https://patentable.app/patents/US-11972805","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11972805","json":"https://patentable.app/api/llm-context/US-11972805","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:30:24.056Z"}