{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11972815","patent":{"patent_number":"US-11972815","title":"Post-write read techniques to improve programming reliability in a memory device","assignee":null,"inventors":[],"filing_date":"2022-05-10T00:00:00.000Z","publication_date":"2024-04-30T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"The memory device includes a controller that is configured to program a plurality of memory cells of a selected word line in a plurality of programming loops and count the number of programming loops to complete programming. The controller is also configured to compare the number of programming loops to complete programming of the memory cells of the selected word line to at least one of a predetermined upper limit and a predetermined lower limit to determine if a plane containing the selected word line is at an elevated risk for read failure. In response to the controller making a determination that the plane containing the selected word line is at an elevated risk for read failure, the controller is configured to conduct a post write read operation at least one word line of the plurality of word lines."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Post-write read techniques to improve programming reliability in a memory device","description":"The memory device includes a controller that is configured to program a plurality of memory cells of a selected word line in a plurality of programming loops and count the number of programming loops ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11972815","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11972815","citation_suggestion":"Patentable. \"Post-write read techniques to improve programming reliability in a memory device\" (US-11972815). https://patentable.app/patents/US-11972815","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11972815","json":"https://patentable.app/api/llm-context/US-11972815","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:37:37.850Z"}