{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11972945","patent":{"patent_number":"US-11972945","title":"Method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2022-05-13T00:00:00.000Z","publication_date":"2024-04-30T00:00:00.000Z","cpc_codes":["G02F","H01L","H01L","H01L","H01L","H01L","H01L","H01L","G02F","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":3,"abstract":"A semiconductor device having favorable electrical characteristics is provided. The semiconductor device is manufactured by a first step of forming a semiconductor layer containing a metal oxide, a second step of forming a first insulating layer, a third step of forming a first conductive film over the first insulating layer, a fourth step of etching part of the first conductive film to form a first conductive layer, thereby forming a first region over the semiconductor layer that overlaps with the first conductive layer and a second region over the semiconductor layer that does not overlap with the first conductive layer, and a fifth step of performing first treatment on the conductive layer. The first treatment is plasma treatment in an atmosphere including a mixed gas of a first gas containing an oxygen element but not containing a hydrogen element, and a second gas containing a hydrogen element but not containing an oxygen element."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device","description":"A semiconductor device having favorable electrical characteristics is provided. The semiconductor device is manufactured by a first step of forming a semiconductor layer containing a metal oxide, a se","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11972945","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11972945","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device\" (US-11972945). https://patentable.app/patents/US-11972945","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11972945","json":"https://patentable.app/api/llm-context/US-11972945","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:15:39.098Z"}