{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11972949","patent":{"patent_number":"US-11972949","title":"SiC substrate manufacturing method and manufacturing device, and method for reducing work-affected layer in sic substrate","assignee":null,"inventors":[],"filing_date":"2020-03-03T00:00:00.000Z","publication_date":"2024-04-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A device for manufacturing a SiC substrate, in which the occurrence of a work-affected layer is reduced, or from which a work-affected layer is removed, comprises: a main container which can accommodate a SiC substrate and which generates, by heating, a vapor pressure of a vapor-phase species including elemental Si and a vapor-phase species including elemental C in an internal space; and a heating furnace for accommodating the main container, generating a vapor pressure of the vapor-phase species including elemental Si in the internal space, and heating so that a temperature gradient is formed; the main container having an etching space formed by causing a portion of the main container disposed on the low-temperature side of the temperature gradient and the SiC substrate to face each other in a state in which the SiC substrate is disposed on the high-temperature side of the temperature gradient."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"SiC substrate manufacturing method and manufacturing device, and method for reducing work-affected layer in sic substrate","description":"A device for manufacturing a SiC substrate, in which the occurrence of a work-affected layer is reduced, or from which a work-affected layer is removed, comprises: a main container which can accommoda","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11972949","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11972949","citation_suggestion":"Patentable. \"SiC substrate manufacturing method and manufacturing device, and method for reducing work-affected layer in sic substrate\" (US-11972949). https://patentable.app/patents/US-11972949","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11972949","json":"https://patentable.app/api/llm-context/US-11972949","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:18:12.707Z"}