{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11972972","patent":{"patent_number":"US-11972972","title":"Isolation structure and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2021-10-12T00:00:00.000Z","publication_date":"2024-04-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A method for forming an isolation structure includes: forming a trench at a surface of a substrate; forming a mask pattern on the substrate, wherein the mask pattern has an opening communicated with the trench; filling a first isolation material layer in the opening and the trench, wherein a surface of the first isolation material layer defines a first recess; filling a second isolation material layer into the first recess; partially removing the first and second isolation material layers, to form a second recess, performing first and second oblique ion implantation processes, to form damage regions in the first isolation material layer; performing a decoupled plasma treatment, to transform portions of the damage regions into a protection layer having etching selectivity with respect to the damage regions; and removing the damage regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Isolation structure and manufacturing method thereof","description":"A method for forming an isolation structure includes: forming a trench at a surface of a substrate; forming a mask pattern on the substrate, wherein the mask pattern has an opening communicated with t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11972972","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11972972","citation_suggestion":"Patentable. \"Isolation structure and manufacturing method thereof\" (US-11972972). https://patentable.app/patents/US-11972972","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11972972","json":"https://patentable.app/api/llm-context/US-11972972","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:15:36.871Z"}