{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11972983","patent":{"patent_number":"US-11972983","title":"Miniaturized transistor structure with controlled dimensions of source/drain and contact-opening and related manufacture method","assignee":null,"inventors":[],"filing_date":"2020-12-31T00:00:00.000Z","publication_date":"2024-04-30T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":21,"abstract":"A transistor structure includes a semiconductor substrate, a gate structure, a channel region, a first conductive region, and a first isolation region. The semiconductor substrate has a semiconductor surface. The gate structure has a length. The first conductive region is electrically coupled to the channel region. The first isolation region is next to the first conductive region. A length of the first conductive region between the gate structure and the first isolation is controlled by a single photolithography process which is originally configured to define the length of the gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Miniaturized transistor structure with controlled dimensions of source/drain and contact-opening and related manufacture method","description":"A transistor structure includes a semiconductor substrate, a gate structure, a channel region, a first conductive region, and a first isolation region. The semiconductor substrate has a semiconductor ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11972983","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11972983","citation_suggestion":"Patentable. \"Miniaturized transistor structure with controlled dimensions of source/drain and contact-opening and related manufacture method\" (US-11972983). https://patentable.app/patents/US-11972983","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11972983","json":"https://patentable.app/api/llm-context/US-11972983","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:15:04.288Z"}