{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11972996","patent":{"patent_number":"US-11972996","title":"Semiconductor device structures and methods of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2020-08-28T00:00:00.000Z","publication_date":"2024-04-30T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a gate structure and a temperature sensitive component. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first electrode, the second electrode and the gate structure are disposed on the second nitride semiconductor layer. The temperature sensitive component is disposed external to a region between the gate structure and the first electrode along a first direction in parallel to an interface of the first nitride semiconductor layer and the second nitride semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device structures and methods of manufacturing the same","description":"Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11972996","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11972996","citation_suggestion":"Patentable. \"Semiconductor device structures and methods of manufacturing the same\" (US-11972996). https://patentable.app/patents/US-11972996","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11972996","json":"https://patentable.app/api/llm-context/US-11972996","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:23:03.231Z"}