{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11973006","patent":{"patent_number":"US-11973006","title":"Self-aligned contact openings for backside through substrate vias","assignee":null,"inventors":[],"filing_date":"2020-10-05T00:00:00.000Z","publication_date":"2024-04-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":21,"abstract":"A method includes etching a through-substrate via (TSV) in a substrate from a backside of the substrate. The substrate has a device layer on a frontside. The method further includes depositing a conformal spacer layer on the backside of the substrate, and sidewalls and a bottom of the TSV, and etching the spacer layer to form a self-aligned mask for etching a contact opening at the bottom of TSV to a metal pad in the device layer, and etching the contact opening at the bottom of TSV to the metal pad in the device layer. The method further includes disposing a conductive material layer in the TSV and the contact opening to make a vertical interconnection from the backside of the substrate to the metal pad in the device layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned contact openings for backside through substrate vias","description":"A method includes etching a through-substrate via (TSV) in a substrate from a backside of the substrate. The substrate has a device layer on a frontside. The method further includes depositing a confo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11973006","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11973006","citation_suggestion":"Patentable. \"Self-aligned contact openings for backside through substrate vias\" (US-11973006). https://patentable.app/patents/US-11973006","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11973006","json":"https://patentable.app/api/llm-context/US-11973006","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:41:45.145Z"}