{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11973019","patent":{"patent_number":"US-11973019","title":"Deep trench capacitors in an inter-layer medium on an interconnect layer of an integrated circuit die and related methods","assignee":null,"inventors":[],"filing_date":"2021-05-19T00:00:00.000Z","publication_date":"2024-04-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":22,"abstract":"Deep trench capacitors (DTCs) in an inter-layer medium (ILM) on an interconnect layer of an integrated circuit (IC) die is disclosed. A method of fabricating an IC die comprising DTCs in the ILM is also disclosed. The DTCs are disposed on an IC, in an ILM, to minimize the lengths of the power and ground traces coupling the DTCs to circuits in a semiconductor layer. The DTCs and the semiconductor layer are on opposite sides of the metal layer(s) used to interconnect the circuits, so the locations of the DTCs in the ILM can be independent of circuit layout and interconnect routing. IC dies with DTCs disposed in the ILM can significantly reduce voltage droop and spikes in IC dies in an IC stack. In one example, DTCs are also located in trenches in the substrate of the IC die."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Deep trench capacitors in an inter-layer medium on an interconnect layer of an integrated circuit die and related methods","description":"Deep trench capacitors (DTCs) in an inter-layer medium (ILM) on an interconnect layer of an integrated circuit (IC) die is disclosed. A method of fabricating an IC die comprising DTCs in the ILM is al","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11973019","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11973019","citation_suggestion":"Patentable. \"Deep trench capacitors in an inter-layer medium on an interconnect layer of an integrated circuit die and related methods\" (US-11973019). https://patentable.app/patents/US-11973019","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11973019","json":"https://patentable.app/api/llm-context/US-11973019","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:46:53.487Z"}