{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11973117","patent":{"patent_number":"US-11973117","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-08-03T00:00:00.000Z","publication_date":"2024-04-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Methods of forming contacts for source/drain regions and a contact plug for a gate stack of a finFET device are disclosed herein. Methods include etching a contact opening through a dielectric layer to expose surfaces of a first source/drain contact and repairing silicon oxide structures along sidewall surfaces of the contact opening and along planar surfaces of the dielectric layer to prevent selective loss defects from occurring during a subsequent selective deposition of conductive fill materials and during subsequent etching of other contact openings. The methods further include performing a selective bottom-up deposition of conductive fill material to form a second source/drain contact. According to some of the methods, once the second source/drain contact has been formed, the contact plug may be formed over the gate stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"Methods of forming contacts for source/drain regions and a contact plug for a gate stack of a finFET device are disclosed herein. Methods include etching a contact opening through a dielectric layer t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11973117","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11973117","citation_suggestion":"Patentable. \"Semiconductor device\" (US-11973117). https://patentable.app/patents/US-11973117","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11973117","json":"https://patentable.app/api/llm-context/US-11973117","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:48:33.298Z"}