{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11973143","patent":{"patent_number":"US-11973143","title":"Source or drain structures for germanium N-channel devices","assignee":null,"inventors":[],"filing_date":"2019-03-28T00:00:00.000Z","publication_date":"2024-04-30T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":15,"abstract":"Integrated circuit structures having source or drain structures and germanium N-channels are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion, the upper fin portion including germanium. A gate stack is over the upper fin portion of the fin. A first source or drain structure includes an epitaxial structure embedded in the fin at a first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at a second side of the gate stack. Each epitaxial structure includes a first semiconductor layer in contact with the upper fin portion, and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer comprises silicon, germanium and phosphorous, and the second semiconductor layer comprises silicon and phosphorous."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Source or drain structures for germanium N-channel devices","description":"Integrated circuit structures having source or drain structures and germanium N-channels are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11973143","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11973143","citation_suggestion":"Patentable. \"Source or drain structures for germanium N-channel devices\" (US-11973143). https://patentable.app/patents/US-11973143","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11973143","json":"https://patentable.app/api/llm-context/US-11973143","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T18:39:28.592Z"}