{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11973144","patent":{"patent_number":"US-11973144","title":"Method of manufacturing a semiconductor and a semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-11-29T00:00:00.000Z","publication_date":"2024-04-30T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes an isolation insulating layer disposed over a substrate, a semiconductor fin disposed over the substrate, an upper portion of the semiconductor fin protruding from the isolation insulating layer and a lower portion of the semiconductor fin being embedded in the isolation insulating layer, a gate structure disposed over the upper portion of the semiconductor fin and including a gate dielectric layer and a gate electrode layer, gate sidewall spacers disposed over opposing side faces of the gate structure, and a source/drain epitaxial layer. The upper portion of the semiconductor fin includes a first epitaxial growth enhancement layer made of a semiconductor material different from a remaining part of the semiconductor fin. The first epitaxial growth enhancement layer is in contact with the source/drain epitaxial layer. The gate dielectric layer covers the upper portion of the semiconductor fin including the first epitaxial growth enhancement layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a semiconductor and a semiconductor device","description":"A semiconductor device includes an isolation insulating layer disposed over a substrate, a semiconductor fin disposed over the substrate, an upper portion of the semiconductor fin protruding from the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11973144","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11973144","citation_suggestion":"Patentable. \"Method of manufacturing a semiconductor and a semiconductor device\" (US-11973144). https://patentable.app/patents/US-11973144","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11973144","json":"https://patentable.app/api/llm-context/US-11973144","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:33:03.301Z"}