{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11974431","patent":{"patent_number":"US-11974431","title":"Three-dimensional memory devices and fabricating methods thereof","assignee":null,"inventors":[],"filing_date":"2021-06-21T00:00:00.000Z","publication_date":"2024-04-30T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"The present disclosure provides a method for forming a three-dimensional memory device. The method can comprise forming a film stack with a plurality of dielectric layer pairs on a substrate, forming a channel structure region in the film stack including a plurality of channel structures, and forming a first staircase structure in a first staircase region and a second staircase structure in a second staircase region. Each of the first staircase structure and the second staircase structure can include a plurality of division block structures arranged along a first direction. A first vertical offset defines a boundary between adjacent division block structures. Each division block structure includes a plurality of staircases arranged along a second direction that is different from the first direction. Each staircase includes a plurality of steps arranged along the first direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory devices and fabricating methods thereof","description":"The present disclosure provides a method for forming a three-dimensional memory device. The method can comprise forming a film stack with a plurality of dielectric layer pairs on a substrate, forming ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11974431","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11974431","citation_suggestion":"Patentable. \"Three-dimensional memory devices and fabricating methods thereof\" (US-11974431). https://patentable.app/patents/US-11974431","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11974431","json":"https://patentable.app/api/llm-context/US-11974431","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:44:28.610Z"}