{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11978500","patent":{"patent_number":"US-11978500","title":"Memory device having protrusion of word line","assignee":null,"inventors":[],"filing_date":"2022-05-25T00:00:00.000Z","publication_date":"2024-05-07T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":13,"abstract":"The present disclosure provides a memory device. The memory device includes a substrate, a dielectric layer, a first metallization layer, a first channel layer, a second metallization layer, and a second channel layer. The dielectric layer is disposed on the substrate. The first metallization layer is disposed within the dielectric layer and extends along a first direction. The first channel layer is surrounded by the first metallization layer. The second metallization layer is disposed within the dielectric layer and extends along the first direction. The second channel layer is surrounded by the second metallization layer. The first metallization layer includes a first protruding portion protruding toward the second metallization layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device having protrusion of word line","description":"The present disclosure provides a memory device. The memory device includes a substrate, a dielectric layer, a first metallization layer, a first channel layer, a second metallization layer, and a sec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11978500","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11978500","citation_suggestion":"Patentable. \"Memory device having protrusion of word line\" (US-11978500). https://patentable.app/patents/US-11978500","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11978500","json":"https://patentable.app/api/llm-context/US-11978500","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T02:41:10.180Z"}