{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11978627","patent":{"patent_number":"US-11978627","title":"Substrate for epitaxial growth, method for manufacturing the same, semiconductor device including the same and method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-06-28T00:00:00.000Z","publication_date":"2024-05-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A substrate for epitaxial growth includes a central region that has a center of the substrate and that serves as a non-modified region, and a peripheral region that surrounds the central region in a manner to be spaced apart from the center of the substrate by a distance and that serves as a modified region having a plurality of modified points. A method for manufacturing a substrate for epitaxial growth includes providing a substrate and forming a plurality of modified points in an interior of the substrate in position corresponding to the modified region. A semiconductor device including the substrate and a method for manufacturing the semiconductor device are also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Substrate for epitaxial growth, method for manufacturing the same, semiconductor device including the same and method for manufacturing semiconductor device","description":"A substrate for epitaxial growth includes a central region that has a center of the substrate and that serves as a non-modified region, and a peripheral region that surrounds the central region in a m","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11978627","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11978627","citation_suggestion":"Patentable. \"Substrate for epitaxial growth, method for manufacturing the same, semiconductor device including the same and method for manufacturing semiconductor device\" (US-11978627). https://patentable.app/patents/US-11978627","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11978627","json":"https://patentable.app/api/llm-context/US-11978627","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:19:10.482Z"}