{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11978632","patent":{"patent_number":"US-11978632","title":"Semiconductor device including a semiconductor fin comprising a silicon germanium portion and an isolation structure at a sidewall of the silicon germanium portion","assignee":null,"inventors":[],"filing_date":"2022-06-27T00:00:00.000Z","publication_date":"2024-05-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a semiconductor substrate, an isolation structure, a gate structure, and a source/drain feature. The semiconductor substrate includes a semiconductor fin, wherein the semiconductor fin comprises a silicon germanium portion. The isolation structure is at a sidewall of a bottom portion of the silicon germanium portion. A top portion of the silicon germanium portion is higher than a top surface of the isolation structure, and an atomic concentration of germanium in the top portion of the silicon germanium portion is greater than an atomic concentration of germanium in the bottom portion of the silicon germanium portion. The gate structure is over a first portion of the silicon germanium portion of the semiconductor fin. The source/drain feature is over a second portion of the silicon germanium portion of the semiconductor fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including a semiconductor fin comprising a silicon germanium portion and an isolation structure at a sidewall of the silicon germanium portion","description":"A semiconductor device includes a semiconductor substrate, an isolation structure, a gate structure, and a source/drain feature. The semiconductor substrate includes a semiconductor fin, wherein the s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11978632","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11978632","citation_suggestion":"Patentable. \"Semiconductor device including a semiconductor fin comprising a silicon germanium portion and an isolation structure at a sidewall of the silicon germanium portion\" (US-11978632). https://patentable.app/patents/US-11978632","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11978632","json":"https://patentable.app/api/llm-context/US-11978632","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:07:16.643Z"}