{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11978643","patent":{"patent_number":"US-11978643","title":"Method for manufacturing semiconductor device including performing thermal treatment on substrate and semiconductor device","assignee":null,"inventors":[],"filing_date":"2022-06-21T00:00:00.000Z","publication_date":"2024-05-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"Method for manufacturing a semiconductor device includes: forming a first area and a second area of a peripheral area on a substrate; forming a first lamination structure in the first area, and forming a second lamination structure in an array area and the second area; performing thermal treatment on the substrate so that atoms in a work function layer are diffused into a second dielectric layer, and an interface interaction occurs between the second dielectric layer and a first dielectric layer; removing the first lamination structure to the second dielectric layer, and removing the second lamination structure to the second dielectric layer; forming a fourth barrier layer and a second conductive layer, a content ratio of metallic element to non-metallic element in a first barrier layer being less than a content ratio of metallic element to non-metallic element in a second barrier layer and a third barrier layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device including performing thermal treatment on substrate and semiconductor device","description":"Method for manufacturing a semiconductor device includes: forming a first area and a second area of a peripheral area on a substrate; forming a first lamination structure in the first area, and formin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11978643","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11978643","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device including performing thermal treatment on substrate and semiconductor device\" (US-11978643). https://patentable.app/patents/US-11978643","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11978643","json":"https://patentable.app/api/llm-context/US-11978643","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:42:52.052Z"}