{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11978662","patent":{"patent_number":"US-11978662","title":"Method for preparing semiconductor device with air gap","assignee":null,"inventors":[],"filing_date":"2023-08-11T00:00:00.000Z","publication_date":"2024-05-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method for preparing a semiconductor device, includes: forming a first dielectric structure and a second dielectric structure over a semiconductor substrate; forming a conductive material over the first dielectric structure and the second dielectric structure, wherein the conductive material extends into a first opening between the first dielectric structure and the second dielectric structure; partially removing the conductive material to form a first bit line and a second bit line in the first opening; forming a first capacitor contact and a second capacitor contact in the first dielectric structure and the second dielectric structure, respectively; forming a sealing dielectric layer over the first bit line and the second bit line such that an air gap is formed between the sealing dielectric layer and the semiconductor substrate; and forming a first capacitor and a second capacitor over the first capacitor contact and the second capacitor contact, respectively."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for preparing semiconductor device with air gap","description":"A method for preparing a semiconductor device, includes: forming a first dielectric structure and a second dielectric structure over a semiconductor substrate; forming a conductive material over the f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11978662","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11978662","citation_suggestion":"Patentable. \"Method for preparing semiconductor device with air gap\" (US-11978662). https://patentable.app/patents/US-11978662","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11978662","json":"https://patentable.app/api/llm-context/US-11978662","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:44:39.401Z"}