{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11978691","patent":{"patent_number":"US-11978691","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2023-04-10T00:00:00.000Z","publication_date":"2024-05-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a die stack and an encapsulant covering the die stack. The die stack includes a first die and a second die stacked upon one another, a bonding dielectric layer, and a through die via providing a vertical connection in the die stack. The first die includes a first substrate and a first conductive pad on the first substrate, and the second die includes a second substrate and a second conductive pad on the second substrate. The bonding dielectric layer interposed between the first substrate and the second substrate is in physical contact with at least one selected from the group of the first conductive pad and the second conductive pad. The through die via extends through the first conductive pad and the bonding dielectric layer and lands on the second pad."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A semiconductor device includes a die stack and an encapsulant covering the die stack. The die stack includes a first die and a second die stacked upon one another, a bonding dielectric layer, and a t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11978691","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11978691","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-11978691). https://patentable.app/patents/US-11978691","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11978691","json":"https://patentable.app/api/llm-context/US-11978691","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:17:40.707Z"}