{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11978702","patent":{"patent_number":"US-11978702","title":"Simultaneous self-forming hea barrier and Cu seeding layers for Cu interconnect","assignee":null,"inventors":[],"filing_date":"2022-03-23T00:00:00.000Z","publication_date":"2024-05-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A Cu interconnect having a diffusion barrier formed with the self-formed high-entropy alloy a method of preparing the same are provided. A high-entropy alloy and Cu are deposited together. When annealing, a diffusion barrier is formed through segregation of the high-entropy alloy may, toward a bottom and a sidewall of an interconnect via, and a Cu seed layer is formed through segregation of Cu at an outer surface of the diffusion barrier, so as to simultaneously self-form the diffusion barrier formed with the self-formed high-entropy alloy and the Cu seed layer. The Cu interconnect having a diffusion barrier formed with the self-formed high-entropy alloy comprises: a base, the self-formed diffusion barrier formed with the self-formed high-entropy alloy and the Cu seed layer and a Cu electroplating layer electroplating on the Cu seed layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Simultaneous self-forming hea barrier and Cu seeding layers for Cu interconnect","description":"A Cu interconnect having a diffusion barrier formed with the self-formed high-entropy alloy a method of preparing the same are provided. A high-entropy alloy and Cu are deposited together. When anneal","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11978702","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11978702","citation_suggestion":"Patentable. \"Simultaneous self-forming hea barrier and Cu seeding layers for Cu interconnect\" (US-11978702). https://patentable.app/patents/US-11978702","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11978702","json":"https://patentable.app/api/llm-context/US-11978702","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:12:14.430Z"}