{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11978740","patent":{"patent_number":"US-11978740","title":"Semiconductor-on-insulator (SOI) semiconductor structures including a high-k dielectric layer and methods of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2022-02-17T00:00:00.000Z","publication_date":"2024-05-07T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor-on-insulator (SOI) semiconductor structures including a high-k dielectric layer and methods of manufacturing the same","description":"A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11978740","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11978740","citation_suggestion":"Patentable. \"Semiconductor-on-insulator (SOI) semiconductor structures including a high-k dielectric layer and methods of manufacturing the same\" (US-11978740). https://patentable.app/patents/US-11978740","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11978740","json":"https://patentable.app/api/llm-context/US-11978740","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:37:03.215Z"}