{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11978768","patent":{"patent_number":"US-11978768","title":"Manufacturing method of semiconductor structure","assignee":null,"inventors":[],"filing_date":"2023-06-08T00:00:00.000Z","publication_date":"2024-05-07T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"A method manufacturing of a semiconductor structure including following steps is provided. A material layer is provided. A first mask layer is formed on the material layer. Core patterns are formed on the first mask layer. A spacer material layer is conformally formed on the core patterns. An etch-back process is performed on the spacer material layer. A portion of the spacer material layer located on two ends of the core pattern is removed, then spacer structures are formed. Each spacer structure includes a merged spacer and a non-merged spacer. The core patterns are removed. The first patterned mask layer is formed to cover a portion of the merged spacer and expose another portion of the merged spacer and the non-merged spacer. The first patterned mask layer and the spacer structure are used as a mask, and the first mask layer is patterned into a second patterned mask layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of semiconductor structure","description":"A method manufacturing of a semiconductor structure including following steps is provided. A material layer is provided. A first mask layer is formed on the material layer. Core patterns are formed on","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11978768","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11978768","citation_suggestion":"Patentable. \"Manufacturing method of semiconductor structure\" (US-11978768). https://patentable.app/patents/US-11978768","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11978768","json":"https://patentable.app/api/llm-context/US-11978768","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:22:42.737Z"}