{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11978775","patent":{"patent_number":"US-11978775","title":"Method of fabricating semiconductor devices including a fin field effect transistor","assignee":null,"inventors":[],"filing_date":"2022-06-16T00:00:00.000Z","publication_date":"2024-05-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device comprising a gate electrode on a substrate, a source/drain pattern on the substrate on a side of the gate electrode, and a gate contact plug on the gate electrode are disclosed. The gate contact plug may include a first gate contact segment, and a second gate contact segment that extends in a vertical direction from a top surface of the first gate contact segment. An upper width of the first gate contact segment may be greater than a lower width of the second gate contact segment."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating semiconductor devices including a fin field effect transistor","description":"A semiconductor device comprising a gate electrode on a substrate, a source/drain pattern on the substrate on a side of the gate electrode, and a gate contact plug on the gate electrode are disclosed.","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11978775","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11978775","citation_suggestion":"Patentable. \"Method of fabricating semiconductor devices including a fin field effect transistor\" (US-11978775). https://patentable.app/patents/US-11978775","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11978775","json":"https://patentable.app/api/llm-context/US-11978775","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:21:11.377Z"}