{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11978797","patent":{"patent_number":"US-11978797","title":"Semiconductor device with doped region between gate and drain","assignee":null,"inventors":[],"filing_date":"2022-08-09T00:00:00.000Z","publication_date":"2024-05-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a gate structure, a drift region, a source region, a drain region, and a doped region. The gate structure is over a semiconductor substrate. The drift region is in the semiconductor substrate and laterally extends past a first side of the gate structure. The source region is in the semiconductor substrate and adjacent a second side of the gate structure opposite the first side. The drain region is in the drift region. The doped region is in the drift region and between the drain region and the gate structure. From a top view the doped region has a strip pattern extending in parallel with a strip pattern of the gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with doped region between gate and drain","description":"A semiconductor device includes a gate structure, a drift region, a source region, a drain region, and a doped region. The gate structure is over a semiconductor substrate. The drift region is in the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11978797","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11978797","citation_suggestion":"Patentable. \"Semiconductor device with doped region between gate and drain\" (US-11978797). https://patentable.app/patents/US-11978797","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11978797","json":"https://patentable.app/api/llm-context/US-11978797","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:35:13.794Z"}