{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11980026","patent":{"patent_number":"US-11980026","title":"Magnetoresistive random access memory for physically unclonable function technology and associated random code generating method","assignee":null,"inventors":[],"filing_date":"2022-06-14T00:00:00.000Z","publication_date":"2024-05-07T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","H01L","G11C","G11C","G11C"],"num_claims":22,"abstract":"A random code generating method for the magnetoresistive random access memory is provided. Firstly, a first magnetoresistive random access memory cell and a second magnetoresistive random access memory cell are programmed into an anti-parallel state. Then, an initial value of a control current is set. Then, an enroll action is performed on the first and second magnetoresistive random access memory cells. If the first and second magnetoresistive random access memory cells fail to pass the verification action, the control current is increased by a current increment, and the step of setting the control current is performed again. If the first and second magnetoresistive random access memory cells pass the verification action, a one-bit random code is stored in the first magnetoresistive random access memory cell or the second magnetoresistive random access memory cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetoresistive random access memory for physically unclonable function technology and associated random code generating method","description":"A random code generating method for the magnetoresistive random access memory is provided. Firstly, a first magnetoresistive random access memory cell and a second magnetoresistive random access memor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11980026","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11980026","citation_suggestion":"Patentable. \"Magnetoresistive random access memory for physically unclonable function technology and associated random code generating method\" (US-11980026). https://patentable.app/patents/US-11980026","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11980026","json":"https://patentable.app/api/llm-context/US-11980026","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:12:55.206Z"}