{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11984316","patent":{"patent_number":"US-11984316","title":"Porogen bonded gap filling material in semiconductor manufacturing","assignee":null,"inventors":[],"filing_date":"2023-05-22T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A device includes a substrate; a first layer over the substrate, the first layer containing a plurality of fin features and a trench between two adjacent fin features. The device also includes a porous material layer having a first portion and a second portion. The first portion is disposed in the trench. The second portion is disposed on a top surface of the first layer. The first and the second portions contain substantially same percentage of Si, substantially same percentage of O, and substantially same percentage of C."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Porogen bonded gap filling material in semiconductor manufacturing","description":"A device includes a substrate; a first layer over the substrate, the first layer containing a plurality of fin features and a trench between two adjacent fin features. The device also includes a porou","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11984316","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11984316","citation_suggestion":"Patentable. \"Porogen bonded gap filling material in semiconductor manufacturing\" (US-11984316). https://patentable.app/patents/US-11984316","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11984316","json":"https://patentable.app/api/llm-context/US-11984316","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:02:21.355Z"}