{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11984325","patent":{"patent_number":"US-11984325","title":"Selective removal of transition metal nitride materials","assignee":null,"inventors":[],"filing_date":"2021-07-12T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of a transition metal nitride and an exposed region of a metal. The contacting may form an oxidized portion of the transition metal nitride and an oxidized portion of the metal. The methods may include forming a plasma of a fluorine-containing precursor and a hydrogen-containing precursor to produce fluorine-containing plasma effluents. The methods may include removing the oxidized portion of the transition metal nitride to expose a non-oxidized portion of the transition metal nitride. The methods may include forming a plasma of a chlorine-containing precursor to produce chlorine-containing plasma effluents. The methods may include removing the non-oxidized portion of the transition metal nitride."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Selective removal of transition metal nitride materials","description":"Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11984325","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11984325","citation_suggestion":"Patentable. \"Selective removal of transition metal nitride materials\" (US-11984325). https://patentable.app/patents/US-11984325","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11984325","json":"https://patentable.app/api/llm-context/US-11984325","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:42:01.309Z"}