{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11984356","patent":{"patent_number":"US-11984356","title":"Contact structures in semiconductor devices","assignee":null,"inventors":[],"filing_date":"2021-11-04T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","B82Y","H01L"],"num_claims":20,"abstract":"A semiconductor device with liner-free contact structures and a method of fabricating the same are disclosed. The method includes forming first and second source/drain (S/D) regions on first and second fin structures, forming a first dielectric layer between the first and second S/D regions, forming first and second gate-all-around (GAA) structures on the first and second fin structures, forming a second dielectric layer on the first and second GAA structures and the first dielectric layer, forming a tapered trench opening in the second dielectric layer and on the first and second GAA structures and the first dielectric layer, selectively forming a seed layer on top surfaces of the first and second GAA structures and the first dielectric layer that are exposed in the tapered trench opening, and selectively depositing a conductive layer on the seed layer to fill the tapered trench opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Contact structures in semiconductor devices","description":"A semiconductor device with liner-free contact structures and a method of fabricating the same are disclosed. The method includes forming first and second source/drain (S/D) regions on first and secon","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11984356","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11984356","citation_suggestion":"Patentable. \"Contact structures in semiconductor devices\" (US-11984356). https://patentable.app/patents/US-11984356","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11984356","json":"https://patentable.app/api/llm-context/US-11984356","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:46:05.428Z"}