{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11984357","patent":{"patent_number":"US-11984357","title":"Semiconductor structure and its manufacturing method","assignee":null,"inventors":[],"filing_date":"2021-10-19T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"The present application discloses a semiconductor structure. The semiconductor structure includes: a substrate, the substrate being provided with a conductive structure; a first lower electrode and a second lower electrode sequentially stacked, the first lower electrode being located between the second lower electrode and the substrate, and the first lower electrode being electrically connected to the conductive structure; a first dielectric layer and a first upper electrode, the first dielectric layer covering a sidewall surface of the first lower electrode, and the first upper electrode being located on one side of the first dielectric layer away from the first lower electrode; and a second dielectric layer and a second upper electrode, the second dielectric layer covering an inner wall and a bottom surface of the second lower electrode, and the second upper electrode filling the recess of the second lower electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and its manufacturing method","description":"The present application discloses a semiconductor structure. The semiconductor structure includes: a substrate, the substrate being provided with a conductive structure; a first lower electrode and a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11984357","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11984357","citation_suggestion":"Patentable. \"Semiconductor structure and its manufacturing method\" (US-11984357). https://patentable.app/patents/US-11984357","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11984357","json":"https://patentable.app/api/llm-context/US-11984357","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T18:36:03.680Z"}