{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11984361","patent":{"patent_number":"US-11984361","title":"Multi-gate devices and method of fabricating the same","assignee":null,"inventors":[],"filing_date":"2023-02-10T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","B82Y"],"num_claims":20,"abstract":"A semiconductor device includes a substrate, a plurality of nanosheets, a plurality of source/drain (S/D) features, and a gate stack. The substrate includes a first fin and a second fin. The first fin has a first width less than a second width of the second fin. The plurality of nanosheets is disposed on the first fin and the second fin. The plurality of source/drain (S/D) features are located on the first fin and the second fin and abutting the plurality of nanosheets. A bottom surface of the plurality of source/drain (S/D) features on the first fin is equal to or lower than a bottom surface of the plurality of source/drain (S/D) features on the second fin. The gate stack wraps each of the plurality of nanosheets."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multi-gate devices and method of fabricating the same","description":"A semiconductor device includes a substrate, a plurality of nanosheets, a plurality of source/drain (S/D) features, and a gate stack. The substrate includes a first fin and a second fin. The first fin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11984361","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11984361","citation_suggestion":"Patentable. \"Multi-gate devices and method of fabricating the same\" (US-11984361). https://patentable.app/patents/US-11984361","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11984361","json":"https://patentable.app/api/llm-context/US-11984361","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:36:20.659Z"}