{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11984363","patent":{"patent_number":"US-11984363","title":"Dual silicide structure and methods thereof","assignee":null,"inventors":[],"filing_date":"2022-11-28T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","B82Y","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a semiconductor substrate, a first epitaxial feature having a first semiconductor material over the semiconductor substrate, and a second epitaxial feature having a second semiconductor material over the semiconductor substrate. The second semiconductor material being different from the first semiconductor material. The semiconductor device further includes a first silicide layer on the first epitaxial feature, a second silicide layer on the second epitaxial feature, a metal layer on the first silicide layer, a first contact feature over the metal layer, and a second contact feature over the second silicide layer. A first number of layers between the first contact feature and the first epitaxial feature is greater than a second number of layers between the second contact feature and the second epitaxial feature."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Dual silicide structure and methods thereof","description":"A semiconductor device includes a semiconductor substrate, a first epitaxial feature having a first semiconductor material over the semiconductor substrate, and a second epitaxial feature having a sec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11984363","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11984363","citation_suggestion":"Patentable. \"Dual silicide structure and methods thereof\" (US-11984363). https://patentable.app/patents/US-11984363","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11984363","json":"https://patentable.app/api/llm-context/US-11984363","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:24:19.411Z"}