{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11984398","patent":{"patent_number":"US-11984398","title":"Semiconductor structure and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2021-09-02T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A semiconductor structure and a manufacturing method thereof are provided. The manufacturing method of the semiconductor structure comprises: providing a substrate, comprising a polysilicon layer, a first conductive layer, a first dielectric layer, a mask layer, and a sacrificial layer sequentially formed thereon, wherein the sacrificial layer has a plurality of first trenches distributed at intervals; forming a first insulating layer on the sacrificial layer; forming a protective layer, the protective layer only covering a surface of the first insulating layer above the top surface of the sacrificial layer; removing the protective layer, part of the first insulating layer, the sacrificial layer, and part of the mask layer to form a first pattern layer; and removing part of the first dielectric layer, part of the first conductive layer, and part of the polysilicon layer by using the first pattern layer as a mask to form a BL structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and manufacturing method thereof","description":"A semiconductor structure and a manufacturing method thereof are provided. The manufacturing method of the semiconductor structure comprises: providing a substrate, comprising a polysilicon layer, a f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11984398","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11984398","citation_suggestion":"Patentable. \"Semiconductor structure and manufacturing method thereof\" (US-11984398). https://patentable.app/patents/US-11984398","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11984398","json":"https://patentable.app/api/llm-context/US-11984398","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:02:34.196Z"}