{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11984401","patent":{"patent_number":"US-11984401","title":"Stacked FET integration with BSPDN","assignee":null,"inventors":[],"filing_date":"2021-06-22T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","B82Y","H01L"],"num_claims":8,"abstract":"A semiconductor device including a hybrid contact scheme for stacked FET is disclosed with integration of a BSPDN. A double-sided (both frontside and backside of the wafer) contact scheme with buried power rail (BPR) and backside power distribution network (BSPDN) provides optimum contact and interconnect. The stacked FET could include, for example, FINFET over FINFET, FINFET over nanosheet, or nanosheet over nanosheet."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Stacked FET integration with BSPDN","description":"A semiconductor device including a hybrid contact scheme for stacked FET is disclosed with integration of a BSPDN. A double-sided (both frontside and backside of the wafer) contact scheme with buried ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11984401","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11984401","citation_suggestion":"Patentable. \"Stacked FET integration with BSPDN\" (US-11984401). https://patentable.app/patents/US-11984401","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11984401","json":"https://patentable.app/api/llm-context/US-11984401","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:15:29.748Z"}