{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11984492","patent":{"patent_number":"US-11984492","title":"Silicon carbide semiconductor device, power converter, and method of manufacturing silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2022-04-27T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":6,"abstract":"A drift layer has a first conductivity type and is provided on a silicon carbide substrate. A well region has a second conductivity type and is provided on the drift layer. A source region has the first conductivity type and is provided on the well region. A gate trench has an inner surface with a bottom located at a deeper position than the well region and a lateral part continuous with the bottom. An electric field relaxation region has the second conductivity type and has at least a part located below the bottom of the gate trench. A surge relaxation region has the first conductivity type, contacts at least a part of the bottom of the gate trench, and is separated from the drift layer by the electric field relaxation region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device, power converter, and method of manufacturing silicon carbide semiconductor device","description":"A drift layer has a first conductivity type and is provided on a silicon carbide substrate. A well region has a second conductivity type and is provided on the drift layer. A source region has the fir","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11984492","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11984492","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device, power converter, and method of manufacturing silicon carbide semiconductor device\" (US-11984492). https://patentable.app/patents/US-11984492","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11984492","json":"https://patentable.app/api/llm-context/US-11984492","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:09:46.687Z"}