{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11984505","patent":{"patent_number":"US-11984505","title":"MOSFET devices and manufacturing methods thereof","assignee":null,"inventors":[],"filing_date":"2021-03-08T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":12,"abstract":"A semiconductor device includes a substrate, a gate oxide layer, a gate electrode and an injection region. The substrate includes a trench, a source region, a drain region and a channel region. The trench includes trench sidewalls and a trench bottom wall. The gate oxide layer is disposed in the trench. The gate oxide layer includes a groove. The gate electrode is disposed in the groove. The injection region is located on at least a side of the trench bottom wall, and at least a part of the injection region is closer to the drain region than the source region so that a threshold voltage at a portion of the channel region close to the injection region is less than a threshold voltage at a portion of the channel region far from the injection region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"MOSFET devices and manufacturing methods thereof","description":"A semiconductor device includes a substrate, a gate oxide layer, a gate electrode and an injection region. The substrate includes a trench, a source region, a drain region and a channel region. The tr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11984505","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11984505","citation_suggestion":"Patentable. \"MOSFET devices and manufacturing methods thereof\" (US-11984505). https://patentable.app/patents/US-11984505","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11984505","json":"https://patentable.app/api/llm-context/US-11984505","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:15:03.582Z"}