{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11984506","patent":{"patent_number":"US-11984506","title":"Field effect transistor having a gate dielectric with a dipole layer and having a gate stressor layer","assignee":null,"inventors":[],"filing_date":"2020-06-25T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":13,"abstract":"Field effect transistors having field effect transistors having gate dielectrics with dipole layers and having gate stressor layers, and methods of fabricating field effect transistors having gate dielectrics with dipole layers and having gate stressor layers, are described. In an example, an integrated circuit structure includes a semiconductor channel structure including a monocrystalline material. A gate dielectric is over the semiconductor channel structure, the gate dielectric including a high-k dielectric layer on a dipole material layer, and the dipole material layer distinct from the high-k dielectric layer. A gate electrode has a workfunction layer on the high-k dielectric layer, the workfunction layer including a metal. A first source or drain structure is at a first side of the gate electrode. A second source or drain structure is at a second side of the gate electrode opposite the first side."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Field effect transistor having a gate dielectric with a dipole layer and having a gate stressor layer","description":"Field effect transistors having field effect transistors having gate dielectrics with dipole layers and having gate stressor layers, and methods of fabricating field effect transistors having gate die","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11984506","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11984506","citation_suggestion":"Patentable. \"Field effect transistor having a gate dielectric with a dipole layer and having a gate stressor layer\" (US-11984506). https://patentable.app/patents/US-11984506","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11984506","json":"https://patentable.app/api/llm-context/US-11984506","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:29:47.386Z"}