{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11984511","patent":{"patent_number":"US-11984511","title":"Manufacturing method of semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-08-11T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":6,"abstract":"A semiconductor device includes a channel structure, a dielectric structure, a gate structure, a first conductive structure, and a second conductive structure. The channel structure has a top surface, a bottom surface, and a sidewall extending from the top surface to the bottom surface. The first conductive structure is disposed on the bottom surface of the channel structure and includes a body portion and at least one convex portion, and a top surface of the convex portion is higher than a top surface of the body portion. The second conductive structure is disposed on the top surface of the channel structure and includes a body portion and at least one convex portion, and a bottom surface of the body portion is higher than a bottom surface of the convex portion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of semiconductor device","description":"A semiconductor device includes a channel structure, a dielectric structure, a gate structure, a first conductive structure, and a second conductive structure. The channel structure has a top surface,","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11984511","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11984511","citation_suggestion":"Patentable. \"Manufacturing method of semiconductor device\" (US-11984511). https://patentable.app/patents/US-11984511","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11984511","json":"https://patentable.app/api/llm-context/US-11984511","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:02:30.183Z"}