{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11984519","patent":{"patent_number":"US-11984519","title":"Semiconductor devices with single-photon avalanche diodes and hybrid isolation structures","assignee":null,"inventors":[],"filing_date":"2023-02-24T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H04N"],"num_claims":20,"abstract":"An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, an isolation structure may be formed in a ring around the SPAD. The isolation structure may be a hybrid isolation structure with both a metal filler that absorbs light and a low-index filler that reflects light. The isolation structure may be formed as a single trench or may include a backside deep trench isolation portion and a front side deep trench isolation portion. The isolation structure may also include a color filtering material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices with single-photon avalanche diodes and hybrid isolation structures","description":"An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11984519","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11984519","citation_suggestion":"Patentable. \"Semiconductor devices with single-photon avalanche diodes and hybrid isolation structures\" (US-11984519). https://patentable.app/patents/US-11984519","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11984519","json":"https://patentable.app/api/llm-context/US-11984519","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:26:11.128Z"}